| Autor: |
Prucnal, Slawomir, Shengqiang Zhou, Xin Ou, Facsko, Stefan, Liedke, Maciej Oskar, Bregolin, Felipe, Liedke, Bartosz, Grebing, Jochen, Fritzsche, Monika, Hübner, Rene, Mücklich, Arndt, Rebohle, Lars, Helm, Manfred, Turek, Marcin, Drozdziel, Andrzej, Skorupa, Wolfgang |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 115 Issue 7, p1-8, 8p, 3 Color Photographs, 1 Black and White Photograph, 1 Diagram, 3 Graphs |
| Abstrakt: |
The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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