| Autor: |
Hiller, Lars, Tonisch, Katja, Pezoldt, Jörg |
| Předmět: |
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| Zdroj: |
Physica Status Solidi (C); Feb2014, Vol. 11 Issue 2, p280-283, 4p |
| Abstrakt: |
AlGaN/GaN heterostructures were grown on sapphire and alternatively on silicon substrates covered with a thin SiC layer by MOCVD. The side gated transistors were fabricated using electron beam lithography. The conductivity of the drain-source branch could be tuned via the side gate formed by a two-dimensional electron gas directly connected to the source drain branch or separated by a trench. The electrical measurements of the fabricated in-plane-gated devices revealed unipolar transistor behavior for both types of substrates. The transconductance was 1 µA/V and the output conductance reached 1.9 µA/V for the side gate transisitor on sapphire. The transconductance and output conductance of the side gate device on silicon substrates were 6 and 18 µA/V, respectively. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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