| Autor: |
Bhalla, Anup, Li, Xueqing, Alexandrov, Petre, Dries, J. Christopher |
| Zdroj: |
1st IEEE Workshop on Wide Bandgap Power Devices & Applications; 2013, p40-43, 4p |
| Abstrakt: |
Excellent Silicon Carbide (SiC) material properties make SiC JFETs extremely attractive for high power density and high frequency power applications, as well as for circuit protection functions. The absence of a gate oxide and internal parasitic devices allows the device to operate especially well at high temperatures. The vertical current flow design of trench JFETs lead to near ideal specific on-resistance when combined with current wafer thinning and laser contact technologies. Device costs are expected to rapidly drop with the maturing of the foundry production model, migration to 6 inch fabrication and the further application of charge-balance technologies. With the availability of integrated drivers, these devices will become much easier to use. Significant packaging improvements will be needed to fully exploit these devices. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
