| Autor: |
Noh, Nurul Izzati Mohammad, Yusof, Khairul Aimi, Zolkapli, Maizatul, Abdullah, Ali Zaini, Abdullah, Wan Fazlida Hanim, Herman, Sukreen Hana |
| Zdroj: |
RSM 2013 IEEE Regional Symposium on Micro & Nanoelectronics; 2013, p130-133, 4p |
| Abstrakt: |
The effect of channel width-to-length (W/L) ratio on MOSFET-ISFET structures was investigated from simulation and experimental approach. A metal-oxide-semiconductor field-effect-transistor (MOSFET) has been adopted to investigate the isothermal point of an ion-sensitive FET (ISFET), which is needed to suit the readout interfacing circuit of an ISFET sensor. The MOSFET structure with different W/L ratio has been characterized in order to see the effect of W/L ratio to the isothermal point. The Keithley 236 Parameter Analyzer and Semi-auto prober micromanipulator system were used to measure the drain-source current (IDS) versus gate to source voltage (VGS) curves at various temperatures from 30 °C to 60 °C. The simulation result showed that the reduction of W/L ratio can decrease the isothermal point and this was proven by the actual measurement. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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