| Autor: |
Sung, Robert, Hu, Steve, Chiang, Kevin, Chang, Katy, Wang, Yu-Po |
| Zdroj: |
2013 8th International Microsystems, Packaging, Assembly & Circuits Technology Conference (IMPACT); 2013, p92-95, 4p |
| Abstrakt: |
In today's industries, utilizing the SMT capacitor is a mature technology and widely used. But, in the future, the 3D-IC stacking assembly, the SMT capacitor might not suitable for the application in the high-speed and higher frequency range. It is caused by the higher density power assumption in stacked 3D-IC configuration. In this study, we test the PDN performance with two conditions, including a practical surface-mounted capacitor model and a 3D Through-Silicon Interposer (TSI) capacitor model. Generally, a suitable SMT capacitor could be found by simulation tool to improve the impedance of a Power Delivery Network system. However, in this study, we also found out that a TSI capacitor could achieve better performance in higher frequency range. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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