| Autor: |
Fryer, A. C., Flewitt, A. J., Ramsdale, C. |
| Zdroj: |
2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013); 2013, p713-716, 4p |
| Abstrakt: |
Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I–V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the −10V bias range measured. This single diode produced a current of 0.1µA at 10V and a reverse current of less than 0.1nA at −10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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