| Autor: |
Schulze, H.-J., Bauer, J.-G., Falck, E., Niedernostheide, F.-J., Biermann, J., Dutemeyer, T., Humbel, O., Schieber, A. |
| Zdroj: |
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2013, p257-260, 4p |
| Abstrakt: |
A new diode technology called Emitter Controlled (EC)-HDR (High Dynamic Robustness) that allows a pronounced enhancement in switching safe-operating area has been developed. For the first time, the concept used for this drastic improvement is presented. The same principle has been applied to the Insulated Gate Bipolar Transistor (IGBT). [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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