| Autor: |
Ageev, O., Alekseev, A., Vnukova, A., Gromov, A., Kolomiytsev, A., Konoplev, B., Lisitsyn, S. |
| Zdroj: |
Nanotechnologies in Russia; Jan2014, Vol. 9 Issue 1/2, p26-30, 5p |
| Abstrakt: |
The results of experimental studies of the resolving power and accuracy of nanosized profiling using focused ion beams (FIBs) are presented. Dependences of the resolving power on the ion beam current were obtained for the boron-doped (10 ohm cm (100)) silicon substrate during FIB etching. It has been established that the best resolution upon silicon etching determined by the average thickness of the etched line is 15-52 nm and corresponds to ion beam currents of 1-30 nA. It has been shown that the precision in the formation of a topological pattern on the substrate surface increases with the decreasing magnitude of the ion beam current in the range of 0.5 pA to 1 nA, and the relative error in the formation of the nanostructure decreases from 5.10 to 0.07. The results of our research can be used to develop manufacturing processes when creating submicron structures and elements of nanoelectronics and nanosystem technology by using FIB. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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