| Autor: |
Lin, Zhou, Yan-Xia, Shang, Ze-Song, Wang, Rui, Zhang, Zao-Di, Zhang, Pelenovich, Vasiliy O., De-Jun, Fu, Won, Kang Tae |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Oct2013, Vol. 22 Issue 10, p106105-106108, 4p |
| Abstrakt: |
InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5 × 1016 cm−2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400 °C. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3+ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 Oe (1 Oe = 79.5775 A·m−1), saturation magnetization of 4.35 × 10−5 emu, and remnant magnetization of 4.4 × 10−6 emu. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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