| Autor: |
Merckling, C., Waldron, N., S. Jiang, W. Guo, Collaert, N., Caymax, M., Vancoille, E., Barla, K., Thean, A., Heyns, M., Vandervorst, W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 115 Issue 2, p1-6, 6p, 2 Color Photographs, 1 Black and White Photograph, 2 Diagrams, 1 Graph |
| Abstrakt: |
This study relates to the heteroepitaxy of InP on patterned Si substrates using the defect trapping technique. We carefully investigated the growth mechanism in shallow trench isolation trenches to optimize the nucleation layer. By comparing different recess engineering options: rounded-Ge versus V-grooved, we could show a strong enhancement of the crystalline quality and growth uniformity of the InP semiconductor. The demonstration of III-V heteroepitaxy at scaled dimensions opens the possibility for new applications integrated on Silicon. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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