| Autor: |
Heyn, Ch., Schnüll, S., Hansen, W. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 2014, Vol. 115 Issue 2, p1-7, 7p, 3 Color Photographs, 6 Graphs |
| Abstrakt: |
We study the tuneability of nanoholes created by local droplet etching of A1GaAs surfaces with A1 droplets at varied coverage ϑ of the deposited droplet material and process temperature T. For the contact angle of the as-grown droplets a mean value of 66° is determined, which depends neither on ϑ nor on T. The experimental results on the hole structural characteristics are interpreted in terms of scaling models yielding a general form f(ϑ, T) ∝ ϑq exp(E/[kBT]) with constants q and E and Boltzmann's constant kB. In detail, the hole density varies from N=4.0 x 106 up to 1.5 x 108 cm-2, and the scaling parameters are q=0 and E=EN=2.46 eV. The hole diameter varies from 50 up to 190 nm with scaling parameters q=1/3 and E=-EN/3. Moreover, the hole depth varies from 9 up to 125 nm with q=2/3 and E=-1.73 eV. Furthermore, a threshold coverage of at least 0.2 monolayers (ML) must be deposited before hole formation takes place. In situ electron diffraction indicates that these 0.2 ML are consumed for a surface reconstruction change from (3x1) to (2x1). For coverages above 2.0 ML holes with a bimodal depth distribution are observed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
