| Autor: |
Look, D. C., Leedy, K. D., Thomson, D. B., Wang, B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 115 Issue 1, p1-4, 4p, 6 Graphs |
| Abstrakt: |
The effects of point and extended defects on concentration n and mobility μ are studied in thin films of Ga-doped ZnO (GZO) grown by pulsed laser deposition on quartz or ZnO itself. The most important defects in the bulk are point defects, mainly Zn vacancies, and their concentrations are similar in GZO/quartz and in GZO/ZnO. On the other hand, the dominant defects at the interface are extended defects, and their concentrations are much higher in GZO/quartz than in GZO/ZnO. Consequently, the mobility in GZO/quartz is lower and more thickness-dependent than that in GZO/ZnO. The effects of point and extended defects can be mitigated by annealing on Zn foil, and by use of buffer layers, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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