| Autor: |
Zhang, S., Fu, W. Y., Holec, D., Humphreys, C. J., Moram, M. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Dec2013, Vol. 114 Issue 24, p243516, 6p, 2 Charts, 3 Graphs |
| Abstrakt: |
Elastic constants of hexagonal ScxGa1-xN and ScxAl1-xN up to x = 0.375 were calculated using a stress-strain approach. C11, C33, C44, and C66 decreased while C12 and C13 increased slightly with increasing x. The biaxial [0001] Poisson ratios increased from 0.21 for GaN to 0.38 for Sc0.375Ga0.625 N and from 0.22 for AlN to 0.40 for Sc0.375Al0.625N, due to greater u values, in-plane bond lengths and bond ionicities. Subsequently, critical thicknesses for stress relaxation were calculated for ScxAl1-xN/AlN, ScxGa1-xN/GaN, and ScxAl1-xN/GaN heterostructures using an energy balance model. These range from 2 nm for Sc0.375Al0.625N/AlN and Sc0.375Ga0.625N/GaN to infinity for lattice-matched Sc0.18Al0.82N/GaN. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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