An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications.
| Autor: | Huang, J.C., Jackson, G.S., Shanfield, S., Platzker, A., Saledas, P.K., Weichert, C. |
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| Zdroj: | IEEE Transactions on Microwave Theory & Techniques; 1993, Vol. 41 Issue 5, p752-759, 8p |
| Databáze: | Complementary Index |
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