Silicon carbide FETs for high temperature nuclear environments.
| Autor: | Scozzie, C.J., McGarrity, J.M., Blackburn, J., DeLancey, W.M. |
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| Zdroj: | IEEE Transactions on Nuclear Science; 1996, Vol. 43 Issue 3, p1642-1648, 7p |
| Databáze: | Complementary Index |
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