Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation.
| Autor: | Moreau, Y., Duzellier, S., Gasiot, J. |
|---|---|
| Zdroj: | IEEE Transactions on Nuclear Science; 1995, Vol. 42 Issue 6, p1789-1796, 8p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|