Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation.
Autor: | Moreau, Y., Duzellier, S., Gasiot, J. |
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Zdroj: | IEEE Transactions on Nuclear Science; 1995, Vol. 42 Issue 6, p1789-1796, 8p |
Databáze: | Complementary Index |
Externí odkaz: |