Measurement of proton induced radiation damage to CMOS transistors and p-i-n diodes.
Autor: | Ziock, H.J., Hoffman, C.M., Holtkamp, D., Kinnison, W.W., Milner, C., Sommer, W.F., Bacigalupi, J., Cartiglia, N., DeWitt, J., Kaluzniacki, A., Kolanoski, H., Pitzl, D., Rowe, W.A., Sadrozinski, H.F.-W., Spencer, E., Tenenbaum, P., Ferguson, P., Giubellino, P., Sartori, S. |
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Zdroj: | IEEE Transactions on Nuclear Science; 1990, Vol. 37 Issue 3, p1238-1241, 4p |
Databáze: | Complementary Index |
Externí odkaz: |