Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons.
| Autor: | Janousek, B.K., Krantz, R.J., Bloss, W.L., Yamada, W.E., Brown, S., Remke, R.L., Witmer, S. |
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| Zdroj: | IEEE Transactions on Nuclear Science; 1989, Vol. 36 Issue 6, p2223-2228, 6p |
| Databáze: | Complementary Index |
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