Experimental and analytical investigation of single event, multiple bit upsets in poly-silicon load, 64 K*1 NMOS SRAMs.
| Autor: | Song, Y., Vu, K.N., Cable, J.S., Witteles, A.A., Kolasinski, W.A., Koga, R., Elder, J.H., Osborn, J.V., Martin, R.C., Ghoniem, N.M. |
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| Zdroj: | IEEE Transactions on Nuclear Science; 1988, Vol. 35 Issue 6, p1673-1677, 5p |
| Databáze: | Complementary Index |
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