High energy neutron irradiation effects in GaAs modulation-doped field effect transistors (MOSFETs): threshold voltage.
| Autor: | Krantz, R.J., Bloss, W.L., O'Loughlin, M.J. |
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| Zdroj: | IEEE Transactions on Nuclear Science; 1988, Vol. 35 Issue 6, p1438-1443, 6p |
| Databáze: | Complementary Index |
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