Temperature Dependence of Transient Electron Radiation Upset in TTL NAND Gates.
Autor: | Leedy, T. F., McLane, G. F., Guenzer, G. C. |
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Zdroj: | IEEE Transactions on Nuclear Science; 1981, Vol. 28 Issue 6, p4597-4605, 9p |
Databáze: | Complementary Index |
Externí odkaz: |