Effects of Defects and Impurities in Starting Material on Radiation Hardness of CMOS/SOS Devices.
Autor: | Peel, J. L., Barry, M. D., Green, L. G. |
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Zdroj: | IEEE Transactions on Nuclear Science; 1976, Vol. 23 Issue 6, p1594-1598, 5p |
Databáze: | Complementary Index |
Externí odkaz: |