Effects of Defects and Impurities in Starting Material on Radiation Hardness of CMOS/SOS Devices.

Autor: Peel, J. L., Barry, M. D., Green, L. G.
Zdroj: IEEE Transactions on Nuclear Science; 1976, Vol. 23 Issue 6, p1594-1598, 5p
Databáze: Complementary Index