Improvement of RF performance of GaAs/Si MESFETs using buried oxygen implantation.
| Autor: | Sriram, S., Messham, R.L., Smith, T.J., Eldridge, G.W. |
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| Zdroj: | IEEE Transactions on Electron Devices; 1996, Vol. 43 Issue 5, p834-836, 3p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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