Characteristics of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT's with n-and p-channel doping.
| Autor: | Tian, H., Kim, K.W., Littlejohn, M.A., Mishra, U.K. |
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| Zdroj: | IEEE Transactions on Electron Devices; 1993, Vol. 40 Issue 12, p2362-2365, 4p |
| Databáze: | Complementary Index |
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