Base recombination of high performance InGaAs/InP HBT's.

Autor: Seabury, C.W., Farley, C.W., McDermott, B.T., Higgins, J.A., Lin, C.L., Kirchner, P.J., Woodall, J.M., Gee, R.C.
Zdroj: IEEE Transactions on Electron Devices; 1993, Vol. 40 Issue 11, p2123-2124, 2p
Databáze: Complementary Index