Base recombination of high performance InGaAs/InP HBT's.
Autor: | Seabury, C.W., Farley, C.W., McDermott, B.T., Higgins, J.A., Lin, C.L., Kirchner, P.J., Woodall, J.M., Gee, R.C. |
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Zdroj: | IEEE Transactions on Electron Devices; 1993, Vol. 40 Issue 11, p2123-2124, 2p |
Databáze: | Complementary Index |
Externí odkaz: |