Optimization of the tradeoff between switching speed of the internal diode and on-resistance in gold- and platinum-implanted power metal-oxide-semiconductor devices.
Autor: | Catania, M.F., Frisina, F., Tavolo, N., Ferla, G., Coffia, S., Campisano, S.U. |
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Zdroj: | IEEE Transactions on Electron Devices; 1992, Vol. 39 Issue 12, p2745-2749, 5p |
Databáze: | Complementary Index |
Externí odkaz: |