Optimization of the tradeoff between switching speed of the internal diode and on-resistance in gold- and platinum-implanted power metal-oxide-semiconductor devices.

Autor: Catania, M.F., Frisina, F., Tavolo, N., Ferla, G., Coffia, S., Campisano, S.U.
Zdroj: IEEE Transactions on Electron Devices; 1992, Vol. 39 Issue 12, p2745-2749, 5p
Databáze: Complementary Index