High-field mobility effects in reoxidized nitrided oxide (ONO) transistors.
| Autor: | Cable, J.S., Woo, J.C.S. |
|---|---|
| Zdroj: | IEEE Transactions on Electron Devices; 1992, Vol. 39 Issue 3, p607-613, 7p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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| Autor: | Cable, J.S., Woo, J.C.S. |
|---|---|
| Zdroj: | IEEE Transactions on Electron Devices; 1992, Vol. 39 Issue 3, p607-613, 7p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|