High-transconductance InGaAs/InAlAs SISFETs.
Autor: | Jackson, T.N., Solomon, P.M., Tischler, M.A., Pettit, G.D., Canora, F.J., DeGelormo, J.F., Bucchignano, J.J., Wind, S.J. |
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Zdroj: | IEEE Transactions on Electron Devices; 1991, Vol. 38 Issue 12, p2703-2704, 2p |
Databáze: | Complementary Index |
Externí odkaz: |