High-transconductance InGaAs/InAlAs SISFETs.

Autor: Jackson, T.N., Solomon, P.M., Tischler, M.A., Pettit, G.D., Canora, F.J., DeGelormo, J.F., Bucchignano, J.J., Wind, S.J.
Zdroj: IEEE Transactions on Electron Devices; 1991, Vol. 38 Issue 12, p2703-2704, 2p
Databáze: Complementary Index