Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator.
| Autor: | Ouisse, T., Cristoloveanu, S., Elewa, T., Haddara, H., Borel, G., Ioannou, D.E. |
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| Zdroj: | IEEE Transactions on Electron Devices; 1991, Vol. 38 Issue 6, p1432-1444, 13p |
| Databáze: | Complementary Index |
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