Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperature.
Autor: | Elewa, T., Balestra, F., Cristoloveanu, S., Hafez, I.M., Colinge, J.-P., Auberton-Herve, A.-J., Davis, J.R. |
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Zdroj: | IEEE Transactions on Electron Devices; 1990, Vol. 37 Issue 4, p1007-1019, 13p |
Databáze: | Complementary Index |
Externí odkaz: |