Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperature.

Autor: Elewa, T., Balestra, F., Cristoloveanu, S., Hafez, I.M., Colinge, J.-P., Auberton-Herve, A.-J., Davis, J.R.
Zdroj: IEEE Transactions on Electron Devices; 1990, Vol. 37 Issue 4, p1007-1019, 13p
Databáze: Complementary Index