High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI.

Autor: Lu, C.-Y., Sung, J.J., Kirsch, H.C., Tsai, N.-S., Liu, R., Manocha, A.S., Hillenius, S.J.
Zdroj: IEEE Transactions on Electron Devices; 1989, Vol. 36 Issue 11, p2530-2536, 7p
Databáze: Complementary Index