High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI.
Autor: | Lu, C.-Y., Sung, J.J., Kirsch, H.C., Tsai, N.-S., Liu, R., Manocha, A.S., Hillenius, S.J. |
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Zdroj: | IEEE Transactions on Electron Devices; 1989, Vol. 36 Issue 11, p2530-2536, 7p |
Databáze: | Complementary Index |
Externí odkaz: |