Dual-type CMOS gate electrodes by dopant diffusion from silicide.
| Autor: | Nygren, S., Amm, D.T., Levy, D., Torres, J., Goltz, G., d'Ouville, T.T., Delpech, P. |
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| Zdroj: | IEEE Transactions on Electron Devices; 1989, Vol. 36 Issue 6, p1087-1093, 7p |
| Databáze: | Complementary Index |
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