High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy.
| Autor: | Antreasyan, A., Garbinski, P.A., Mattera, V.D., Feuer, M.D., Temkin, H., Filipe, J. |
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| Zdroj: | IEEE Transactions on Electron Devices; 1989, Vol. 36 Issue 2, p256-262, 7p |
| Databáze: | Complementary Index |
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