Monolithically integrated InGaAs PIN-InP JFET amplifier with high sensitivity.

Autor:	Kim, S.J., Guth, G., Vella-Coleiro, G.P., Seabury, C.W.
Zdroj:	IEEE Transactions on Electron Devices; 1988, Vol. 35 Issue 12, p2434-2435, 2p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu