The relationship between gate bias and hot-carrier-induced instabilities in buried- and surface-channel PMOSFETs.
| Autor: | Brassington, M.P., Razouk, R.R. |
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| Zdroj: | IEEE Transactions on Electron Devices; 1988, Vol. 35 Issue 3, p320-324, 5p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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