Reliability of power GaAs field-effect transistors.
Autor: | Fukui, H., Wemple, S.H., Irvin, J.C., Niehaus, W.C., Hwang, J.C.M., Cox, H.M., Schlosser, W.O., DiLorenzo, J.V. |
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Zdroj: | IEEE Transactions on Electron Devices; 1982, Vol. 29 Issue 3, p395-401, 7p |
Databáze: | Complementary Index |
Externí odkaz: |