Reliability of power GaAs field-effect transistors.

Autor: Fukui, H., Wemple, S.H., Irvin, J.C., Niehaus, W.C., Hwang, J.C.M., Cox, H.M., Schlosser, W.O., DiLorenzo, J.V.
Zdroj: IEEE Transactions on Electron Devices; 1982, Vol. 29 Issue 3, p395-401, 7p
Databáze: Complementary Index