Optimization of GaAs power MESFET device and material parameters for 15-GHz operation.
Autor: | Macksey, H.M., Doerbeck, F.H., Vail, R.C. |
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Zdroj: | IEEE Transactions on Electron Devices; 1980, Vol. 27 Issue 2, p467-471, 5p |
Databáze: | Complementary Index |
Externí odkaz: |