Proximity effect and hot-electron diffusion in Ag/Al/sub 2/O/sub 3//Al tunnel junctions.

Autor: Netel, H., Jochum, J., Labov, S.E., Mears, C.A., Frank, M., Chow, D., Lindeman, M.A., Hiller, L.J.
Předmět:
Zdroj: IEEE Transactions on Applied Superconductivity; 1997, Vol. 7 Issue 2, p3379-3382, 4p
Abstrakt: We have fabricated Ag/Al/sub 2/O/sub 3//Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals. [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index