| Autor: |
Bluthner, K., Gotz, M., Hadicke, A., Krech, W., Wagner, T., Muhlig, H., Fuchs, H.-J., Hubner, U., Schelle, D., Kley, E.-B., Fritzsch, L. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Applied Superconductivity; 1997, Vol. 7 Issue 2, p3099-3102, 4p |
| Abstrakt: |
As an alternative to the shadow evaporation method for the preparation of ultrasmall tunnel junctions we have established the so-called self-aligned in-line technique. It was applied to the fabrication of common Al/AlO/sub x//Al-type and, for the first time, Nb/AlO/sub x//Nb-based single-electron transistors. The characterization of the samples at temperatures in the range of a few hundred millikelvins reveals charging effects (Coulomb blockade and gate modulation) of the quasiparticle current. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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