| Autor: |
Galkin, K. N., Batalov, R. I., Bayazitov, R. M., Novikov, H. A., Shustov, V. A., Bizyaev, D. A., Gaiduk, P. I., Ivlev, G. D., Prokopyev, S. L. |
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| Zdroj: |
Physica Status Solidi (C); Dec2013, Vol. 10 Issue 12, p1824-1827, 4p |
| Abstrakt: |
Recently the significant progress in the creation of thin film structures effectively emitting light in the near infrared region (1.5-1.6 μm) at room temperature has been reached for Ge/Si system by UHV growth techniques by Kimerling's group (Ref. [13]). In this work vacuum deposition of Ge thin films onto Si substrates by magnetron sputtering followed by nanosecond pulsed annealing was performed. During deposition sputtering time ( t = 3-20 min) and substrate temperature ( T = 20-300 °C) were varied. During pulsed treatments powerful laser radiation (λ = 690 nm) or high current ion beams (C+, H+, E = 300 keV, J ≤ 150 A/cm2) were used. The dependence of structural and optical properties of Ge/Si films on parameters of magnetron sputtering and pulsed treatments was investigated. Optimum parameters for deposition and pulsed treatments resulted in light emitting layers are determined. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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