| Autor: |
Khomyak, V. V., Ilashchuk, M. I., Parfenyuk, O. A., Shtepliuk, I. I. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; Dec2013, Vol. 114 Issue 22, p223715, 6p, 2 Black and White Photographs, 1 Diagram, 1 Chart, 2 Graphs |
| Abstrakt: |
n-ZnO/p-CdTe photosensitive anisotype surface-barrier structures were fabricated by means of radio-frequency (rf) magnetron sputtering of the zinc oxide onto freshly cleaved surface of the single-crystal CdTe. It was revealed that dark I-V characteristics at the forward voltages are determined by recombination and tunnel-recombination processes involving surface energy states at the interface. At reverse bias, space-charge limited currents (SCLC) are dominated. It was found that the fabricated structures are referred to smooth p-n-junctions due to the formation of the intermediate Cd1-xZnxTe buffer layer. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
