| Autor: |
Cheol Shin, Woo, Yoon, Taeshik, Hun Mun, Jeong, Yong Kim, Taek, Choi, Sung-Yool, Kim, Taek-Soo, Jin Cho, Byung |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/9/2013, Vol. 103 Issue 24, p243504, 5p, 4 Graphs |
| Abstrakt: |
We present the facile dry transfer of graphene synthesized via chemical vapor deposition on copper film to a functional device substrate. High quality uniform dry transfer of graphene to oxidized silicon substrate was achieved by exploiting the beneficial features of a poly(4-vinylphenol) adhesive layer involving a strong adhesion energy to graphene and negligible influence on the electronic and structural properties of graphene. The graphene field effect transistors (FETs) fabricated using the dry transfer process exhibit excellent electrical performance in terms of high FET mobility and low intrinsic doping level, which proves the feasibility of our approach in graphene-based nanoelectronics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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