Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress.
| Autor: | Hirose, Mayumi, Matsushita, Keiichi, Takagi, Kazutaka, Tsuda, Kunio |
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| Zdroj: | 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 2013, p1-4, 4p |
| Databáze: | Complementary Index |
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