A study of new type CMOS inverter with Gated-IIP load and TFET driver for 22nm technology node.

Autor: Huang, Hsueh-Liang, Lin, Jyi-Tsong, Tsai, Chen-Chi, Chen, Kuan-Yu, Lu, You-Ren, Hsu, Shih-Wen, Lin, Po-Hsieh
Zdroj: 2013 13th International Workshop on Junction Technology (IWJT); 2013, p109-113, 5p
Databáze: Complementary Index