1.55-/spl mu/m InGaAsP-InP laser arrays with integrated-mode expanders fabricated using a single epitaxial growth.
Autor: | Vusirikala, V., Saini, S.S., Bartolo, R.E., Agarwala, S., Whaley, R.D., Johnson, F.G., Stone, D.R., Dagenais, M. |
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Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics; 1997, Vol. 3 Issue 6, p1332-1343, 12p |
Databáze: | Complementary Index |
Externí odkaz: |