Nonequilibrium electron distributions and high-field electron transport in an Al/sub x/Ga/sub 1-x/As-based p-i-n nanostructure semiconductor-a picosecond Raman probe.

Autor: Grann, E.D., Sheih, S.-J., Tsen, K.T., Guncer, S., Ferry, D.K., Salvador, A., Botcharev, A., Morkof, H.
Zdroj: IEEE Journal of Selected Topics in Quantum Electronics; 1995, Vol. 1 Issue 4, p1093-1099, 7p
Databáze: Complementary Index