Flexible test mode approach for 256-Mb DRAM.

Autor: Kirihata, T., Hing Wong, DeBrosse, J.K., Watanabe, Y., Hara, T., Yoshida, M., Wordeman, M.R., Fujii, S., Asao, Y., Krsnik, B.
Zdroj: IEEE Journal of Solid-State Circuits; 1997, Vol. 32 Issue 10, p1525-1534, 10p
Databáze: Complementary Index