A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design.
Autor: | Voinigescu, S.P., Maliepaard, M.C., Showell, J.L., Babcock, G.E., Marchesan, D., Schroter, M., Schvan, P., Harame, D.L. |
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Zdroj: | IEEE Journal of Solid-State Circuits; 1997, Vol. 32 Issue 9, p1430-1439, 10p |
Databáze: | Complementary Index |
Externí odkaz: |