A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design.

Autor: Voinigescu, S.P., Maliepaard, M.C., Showell, J.L., Babcock, G.E., Marchesan, D., Schroter, M., Schvan, P., Harame, D.L.
Zdroj: IEEE Journal of Solid-State Circuits; 1997, Vol. 32 Issue 9, p1430-1439, 10p
Databáze: Complementary Index