Analysis and prevention of DRAM latch-up during power-on.

Autor: Young-Hee Kim, Jae-Yoon Sim, Hong June Park, Jae-Ik Doh, Kun-Woo Park, Hyun-Woong Chung, Jong-Hoon Oh, Choon-Sik Oh, Seung-Han Ahn
Zdroj: IEEE Journal of Solid-State Circuits; 1997, Vol. 32 Issue 1, p79-85, 7p
Databáze: Complementary Index