Advanced modeling of distortion effects in bipolar transistors using the Mextram model.

Autor: De Vreede, N., De Graaff, H.C., Mouthaan, K., De Kok, M., Tauritz, J.L., Baets, R.G.F.
Zdroj: IEEE Journal of Solid-State Circuits; 1996, Vol. 31 Issue 1, p114-121, 8p
Databáze: Complementary Index